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Lıberty Lab working with our local partner can help you with analyzing IC failures and identifying root cause of failures using a side array of tools and methods including microscopy.  Whether you need your product analyzed during new product introduction, reliability qualification testing, or field returns, we can give you the answers you are looking for.

In addition to failure analysis we also provide:

  • Competitive teardown
  • Counterfeit analysis
  • Construction analysis

We provide comprehensive failure analysis support that includes:

  • Turn-key FA
  • Electrical FA
  • Physical FA
  • Microscopy

chip

Turn-Key FA

Our process starts with gathering the necessary information from our client, consulting to review the analysis flow, and successful application of techniques to solve your problem.  It can include the failure analysis levels below:

Level 1: Non-Destructive

Non-destructive techniques may isolate and localize the defect and are always applied first.  They can include:

  • Electrical failure verification of all components, including unpowered and powered Curve Tracing and Latch Up testing
  • External visual optical inspection
  • X-ray for internal anomalies
  • CSAM to check for delamination, cracks, flip chip bump integrity, bonded wafers, and packaging issues
  • TDR for changes in impedance
  • FMI analyses to identify hot spots
Level 2: Destructive

When nondestructive testing does not isolate or localize a defect, we turn to a discrete destructive technique to enable internal inspection of the device. We access standard semiconductor components as well as ceramic chip capacitors, PCB’s, Tantalum caps, and Foil caps.

We often uncover the anomalous condition at this point and don’t need to do further analysis. Typical tools employed for this Level include:

  • Laser-based localization
  • XIVA
  • EMMI
Level 3: Application of Advanced Tools

If Levels 1 Level 2 don’t yield sufficient data, a careful series of steps ensue to take us deeper into the component’s circuitry and molecular composition. The exact sequence is determined with information obtained in Discovery and Levels 1 and 2.

Highly skilled technicians use polishing wheels to make serial slices that permit our scientists to analyze inner structures using the appropriate tools. These can include:

  • Optical microscopy
  • SEM
  • FIB/SEM
  • TEM
  • EELS
  • EFTEM
  • XPS
Electrical Failure Analysis

circuits

Our Electrical Failure Analysis includes the following techniques:

  • Curve-Trace: Manual & Automated
  • Emission Microscopy: Near Infrared (EMMI)
  • Fluorescent Micro-Thermal Imaging with Lock-In (FMI)
  • Laser Stimulation Microscopy – Near Infrared
  • Scanning Optical Microscope (SOM) – Backside and Frontside
  • Time Domain Reflectometry (TDR)
  • Circuit Edit FIB (FIB-EDIT)
Physical Failure Analysis

phisical

Our Physical Failure Analysis includes the following techniques:

  • 3-D X-ray Tomography
  • C-Scanning Acoustic Microscopy (C-SAM)
  • De-Capsulation
  • FIB-SEM Cross Sectioning
  • Field Emission – Scanning Electron Microscopy (FE-SEM)
  • Mechanical Cross-Sectioning
  • Parallel Lapping
  • Real Time 2-D X-ray Imaging (RTX)
  • Scanning Acoustic Tomography (SAT)
  • Wet Chemistry – Strong Acids, Bases
Microscopy

microscope

We use advanced tools that have high levels of magnification to view samples and take images of nano-scale structures and materials.  We have several tools at our disposal to do this:

  • 2-D X-ray Microscopy – Real Time X-ray (RTX)
  • 3-D X-ray Tomography
  • C-Mode Scanning Acoustical Microscopy (C-SAM)
  • Field Emission Scanning Electron Microscopy (FE-SEM)
  • Focused Ion Beam with Scanning Electron Microscopy (FIB-SEM)
  • High Resolution Optical Microscopy
  • Laser Confocal Microscopy (SOM)
  • Scanning Acoustical Topography (SAT)
  • Scanning Transmission Electron Microscopy (STEM)
  • Transmission Electron Microscopy (TEM)
  • Ultra High Resolution-SEM (UHR-SEM)